Low resistive ZnSe substrates

Doping by annealing of ZnSe single crystals grown by solid phase recrystall isation in a mixture of Al and Zn at 860 degrees C has been studied. The pr operties of doped ZnSe crystals assessed by secondary ions mass spectroscop y, scanning electron microscopy (electron channelling patterns (ECP) and ca thodoluminescence (CL)), double crystal X-ray diffraction (rocking curve) a nd Wall effect measurements depend strongly on the geometry of the crystal which is annealed. In the best case, CL spectra show only the donor-bound e xciton line (2.67 eV at 300 K; 2.77 eV at 100 K) indicating thus, together with ECP and rocking curve FWHM (35 arcsec), the high crystalline quality o f the (1 0 0)-doped substrates. From Wall effect measurements, a free elect ron concentration of 5x10(17)cm(-3) and an electron mobility of 200 cm(2) V -1 s(-1) (resistivity 6.3 x 10(-2) Omega cm) at 300 K are determined. (C) 1 999 Elsevier Science B.V. All rights reserved.