Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing

Lattice parameters of annealed ZnSe crystals have been measured by the Bond method. The annealing was carried out at 1000 degrees C under a definite Z n partial pressure maintained by heating a Zn reservoir after growth from t he melt under Zn partial pressure. The lattice parameter, a, depends on the Zn reservoir temperature during annealing, T-Zn(A); a = 0.566898 +/- 0.000 005 nm at T-Zn(A) of 450-600 degrees C, a = 0.566910 +/- 0.000005 nm at T-Z n(A) of 750 degrees C and a = 0.566913 +/- 0.000003 nm at T-Zn(A) of 900 de grees C. The dependence of lattice parameter on Zn partial pressure is disc ussed. (C) 1999 Elsevier Science B.V. All rights reserved.