Preparation of (0 0 1) ZnSe surfaces for homoepitaxy

Citation
S. Storm et al., Preparation of (0 0 1) ZnSe surfaces for homoepitaxy, J CRYST GR, 197(3), 1999, pp. 517-522
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
3
Year of publication
1999
Pages
517 - 522
Database
ISI
SICI code
0022-0248(199902)197:3<517:PO(01Z>2.0.ZU;2-G
Abstract
As a function of material-specific properties a multiple substrate treatmen t (MST) for preparation of (0 0 1) ZnSe surfaces for homoepitaxy was develo ped including cutting, mechanical processing, chemo-mechanical polishing pr ocedure and a final step of chemical polishing. The resulting average rough ness of the treated surfaces investigated by atomic force microscopy is les s than 1 nm when MST is completed. High-resolution X-ray diffraction topogr aphy has been carried out to detect the underlying structural degradation c aused by mechanical and chemo-mechanical polishing. The thickness of the da maged layer determined by high-resolution X-ray diffraction rocking curve m easurements using 311 reflection (penetration depth approximate to 800 nm) is about 10 mu m and can be removed by means of a final chemical polishing step. (C) 1999 Elsevier Science B.V. All rights reserved.