Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices
P. Verardi et al., Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices, J CRYST GR, 197(3), 1999, pp. 523-528
New results concerning high crystalline ZnO thin films deposited on Si and
sapphire substrates by laser ablation of Zn targets in oxygen reactive atmo
sphere are reported. Cross-section scanning electron microscopy (SEM) studi
es clearly evidenced a columnar structure of the layer. As a result of the
preparation technique for TEM studies, the film is breaking into separate c
olumnar groups: the ZnO columns observed are 100-500 nm thick, depending on
the deposition conditions. The diffraction patterns taken on a large selec
ted area reveal the crystalline hexagonal structure of the ZnO film with a
= 0.324 nm and c = 0.5205 nm. The (0 0 2) diffraction spot is elongated due
to the slope of the diffraction object, that is a confirmation of the fact
that the columns are grown along the c-hexagonal axis. Scanning force micr
oscopy evidenced the sharp boundaries of different domains from the uniform
granular distribution on the surface. Characterization of the films was al
so conducted to establish their performance as piezoelectric layers in tran
sducers for bulk acoustic wave devices in the GHz range. The insertion and
conversion losses and the electromechanical coupling constant were measured
using an appropriate set-up. (C) 1999 Elsevier Science B.V. All rights res
erved.