Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices

Citation
P. Verardi et al., Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices, J CRYST GR, 197(3), 1999, pp. 523-528
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
3
Year of publication
1999
Pages
523 - 528
Database
ISI
SICI code
0022-0248(199902)197:3<523:SFMAEM>2.0.ZU;2-E
Abstract
New results concerning high crystalline ZnO thin films deposited on Si and sapphire substrates by laser ablation of Zn targets in oxygen reactive atmo sphere are reported. Cross-section scanning electron microscopy (SEM) studi es clearly evidenced a columnar structure of the layer. As a result of the preparation technique for TEM studies, the film is breaking into separate c olumnar groups: the ZnO columns observed are 100-500 nm thick, depending on the deposition conditions. The diffraction patterns taken on a large selec ted area reveal the crystalline hexagonal structure of the ZnO film with a = 0.324 nm and c = 0.5205 nm. The (0 0 2) diffraction spot is elongated due to the slope of the diffraction object, that is a confirmation of the fact that the columns are grown along the c-hexagonal axis. Scanning force micr oscopy evidenced the sharp boundaries of different domains from the uniform granular distribution on the surface. Characterization of the films was al so conducted to establish their performance as piezoelectric layers in tran sducers for bulk acoustic wave devices in the GHz range. The insertion and conversion losses and the electromechanical coupling constant were measured using an appropriate set-up. (C) 1999 Elsevier Science B.V. All rights res erved.