Influence of structural defects on lattice parameter and measured composition of Hg1-xCdxTe epilayers

Citation
N. Mainzer et al., Influence of structural defects on lattice parameter and measured composition of Hg1-xCdxTe epilayers, J CRYST GR, 197(3), 1999, pp. 542-546
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
3
Year of publication
1999
Pages
542 - 546
Database
ISI
SICI code
0022-0248(199902)197:3<542:IOSDOL>2.0.ZU;2-7
Abstract
Structural and compositional parameters of the Hg1-xCdxTe layers grown by m etal-organic vapor deposition on (2 1 1)-oriented CdTe substrates were inve stigated by high-resolution X-ray diffraction, high-resolution scanning ele ctron microscopy, energy dispersive spectroscopy in scanning electron micro scopy and Fourier transform infra-red spectroscopy in a transmission mode. Divergence in Cd concentrations, obtained by different methods, is explaine d in terms of extended defects which cause lattice swelling of the Hg1-xCdx Te matrix. Strong correlation between defect density and lattice swelling w as established by absolute measurements of lattice parameters (Bond method) and by direct defect imaging. It is proposed to use high-resolution Bond t echnique for nondestructive monitoring of the layer quality. (C) 1999 Elsev ier Science B.V. All rights reserved.