Diffusion length of minority carriers in (CdZn)Te and (HgCd)Te single crystals measured by EBIC method

Authors
Franc, J Belas, E Toth, AL Sitter, H Hlidek, P Moravec, P Hoschl, P
Citation
J. Franc et al., Diffusion length of minority carriers in (CdZn)Te and (HgCd)Te single crystals measured by EBIC method, J CRYST GR, 197(3), 1999, pp. 593-598
Citations number
24
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
3
Year of publication
1999
Pages
593 - 598
Database
ISI
SICI code
0022-0248(199902)197:3<593:DLOMCI>2.0.ZU;2-3
Abstract
Diffusion length of minority carriers was determined in not intentionally d oped Cd0.93Zn0.07Te and Hg0.8Cd0.2Te single crystals by the EBIC method at temperatures 80-300 K using an evaporated Au Schottky barrier ((CdZn)Te) or a P-N junction produced by ion milling or plasma etching ((HgCd)Te). The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some s howed a steep increase with decreasing temperature. The correlation of the diffusion length measurement with photoluminescence for the (CdZn)Te was ob served. (C) 1999 Elsevier Science B.V. All rights reserved.