High-temperature point defect equilibrium in CdTe modelling

High-temperature (673-1173K) electrical property (sigma,R-H) measurements i n undoped and In-doped (up to 1 x 10(20) at/cm(3)) CdTe were performed unde r different stoichiometric conditions. Cadmium (tellurium) vapor pressure o r temperature electron (hole) density dependences were obtained. The result s are described by a computed defect structure model, which optimizes the d efect reaction constants. A new In incorporation defect reaction is propose d, explaining the dopant self-compensation mechanism. (C) 1999 Elsevier Sci ence B.V. All rights reserved.