Substrate/layer relationships in II-VIs

Citation
Sjc. Irvine et al., Substrate/layer relationships in II-VIs, J CRYST GR, 197(3), 1999, pp. 616-625
Citations number
43
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
3
Year of publication
1999
Pages
616 - 625
Database
ISI
SICI code
0022-0248(199902)197:3<616:SRII>2.0.ZU;2-0
Abstract
This review explores the scope of substrate/layer relationships in TT-VI ep itaxy. In addition to the lattice parameter mismatch, other important facto rs such as valence mismatch, polarity and thermal expansion match are consi dered. In some cases the lattice parameter mismatch is not the dominant fac tor in determining material quality such as ZnSe on GaAs. The ideal for hig h quality epilayers is to use lattice matched II-VI substrates but these ha ve not always been available and alternative substrates have in some cases looked more attractive. Recent progress with CdTe and CdZnTe substrates is changing the prospect for IT-VT substrates. However, issues such as surface preparation and cleaning are highlighted with newly available ZnSe: substr ates. Finally, the potential for II-VI growth onto microcrystalline and amo rphous substrates is considered and possible approaches for promoting grain growth are discussed, (C) 1999 Elsevier Science B.V. All rights reserved.