Zinc segregation in HPB grown nuclear detector grade Cd1-xZnxTe

Citation
P. Fougeres et al., Zinc segregation in HPB grown nuclear detector grade Cd1-xZnxTe, J CRYST GR, 197(3), 1999, pp. 641-645
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
3
Year of publication
1999
Pages
641 - 645
Database
ISI
SICI code
0022-0248(199902)197:3<641:ZSIHGN>2.0.ZU;2-F
Abstract
CZT ingots have been grown by the high pressure Bridgman technique and thei r zinc concentration has been measured by X-ray fluorescence and PIXE on sa mples cut at different growth positions. The zinc concentration map has bee n traced for several wafers showing strong discrepancies along the explored area. The segregation coefficient has been calculated from the experimenta l data taking a directional freezing model. A very good fitting with experi mental values is obtained especially for the PIXE results. Some detectors h ave been manufactured from the wafers and tested in nuclear detection. It i s shown that pair creation energy is modified and that the saturation curve is modified from the head to the tail of the ingot. (C) 1999 Elsevier Scie nce B.V. All rights reserved.