Growth of CdZnTe single crystals for radiation detectors

A new growth technique of CdZnTe single crystals for room-temperature radia tion detectors is developed. It is based on a free growth from the vapour p hase on a oriented single crystal seed. Binary polycrystalline CdTe and ZnT e compounds are placed and heated separately to produce divided Rows which were introduced into the crystal growth zone where they mixed before deposi tion on the seed. Monocrystalline and homogeneous materials with high elect rical resistivity, lour defect density, and crystal volume up to similar to 50 cm(3) are prepared by this technique. (C) 1999 Elsevier Science B.V. Al l rights reserved.