Resistivity simulation of CZT materials

Defects and the relations with the levels introduced in the gap are among t he toughest remaining problems in II-VI semiconductors. Up to now, more tha n 30 levels have been detected without any clear identification and assigna tion for most of them. PICTS, TEES and TSC are well suited for such investi gation, but not complete. A very useful complement is provided by numerical simulation of some properties and the comparison between calculation and e xperimental results. We have used a simple existing model using the neutral ity equation and the Fermi-Dirac distributions. This model was improved to introduce more than three levels which is largely our case (30 levels, 5-6 bands). Carrier concentration and resistivity are then deduced. PICTS resul ts are used as model input. Results and compensation processes are discusse d. (C) 1999 Elsevier Science B.V. All rights reserved.