Defect studies in Cd0.95Mn0.05Te : Ga by DLTS

In this paper we present the results of our investigations of deep levels i n bulk Ga-doped Cd0.95Mn0.05Te mixed crystal by deep level transient spectr oscopy (DLTS) method. Four electron traps have been found with activation e nergies obtained from Arrhenius plots equal to 0.26. 0.53, 0.55 and 0.83 eV . For the first and the second of the traps electron capture processes have been found to be thermally activated with energetic capture barriers equal 0.15 and 0.23 eV, respectively. (C) 1999 Elsevier Science B.V. All rights reserved.