Deep levels in vanadium-doped CdTe and CdZnTe crystals grown by vertical Br
idgman for photorefractive applications are reviewed. Based on photo-induce
d current transient spectroscopy, deep-level transient spectroscopy and dee
p-level optical spectroscopy, deep traps are identified and their electrica
l and optical properties are characterized. A discussion about their origin
and a comparison with results obtained by other spectroscopy techniques ar
e given. (C) 1999 Elsevier Science B.V. All rights reserved.