Investigation of deep levels in vanadium-doped CdTe and CdZnTe

Citation
A. Zerrai et al., Investigation of deep levels in vanadium-doped CdTe and CdZnTe, J CRYST GR, 197(3), 1999, pp. 729-732
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
197
Issue
3
Year of publication
1999
Pages
729 - 732
Database
ISI
SICI code
0022-0248(199902)197:3<729:IODLIV>2.0.ZU;2-8
Abstract
Deep levels in vanadium-doped CdTe and CdZnTe crystals grown by vertical Br idgman for photorefractive applications are reviewed. Based on photo-induce d current transient spectroscopy, deep-level transient spectroscopy and dee p-level optical spectroscopy, deep traps are identified and their electrica l and optical properties are characterized. A discussion about their origin and a comparison with results obtained by other spectroscopy techniques ar e given. (C) 1999 Elsevier Science B.V. All rights reserved.