Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilizedzirconia film growth
Ja. Belot et al., Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilizedzirconia film growth, J MATER RES, 14(1), 1999, pp. 12-15
This communication reports rapid, efficient syntheses of the zirconium-orga
nic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)(4)
and Zr(dpm)(4) (acac = acetylacetonate; dpm = dipivaloylmethanate) as well
as a new, highly volatile, air- and moisture-stable Zr precursor based on a
tetradentate Schiff-base ligand, Zr(tfacen)(2) (tfacen = bis-trifluoroacet
ylacetone-ethylenediiminate). The improved one-step synthetic routes employ
tetrakis(dimethylamido)zirconium as a common intermediate and represent a
major advance over previous methods employing ZrCl4 or diketonate metathesi
s, Furthermore, Zr(tfacen)(2) is shown to be an effective metal-organic pre
cursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zi
rconia thin films.