Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilizedzirconia film growth

Citation
Ja. Belot et al., Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilizedzirconia film growth, J MATER RES, 14(1), 1999, pp. 12-15
Citations number
41
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
14
Issue
1
Year of publication
1999
Pages
12 - 15
Database
ISI
SICI code
0884-2914(199901)14:1<12:ERTVZM>2.0.ZU;2-4
Abstract
This communication reports rapid, efficient syntheses of the zirconium-orga nic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)(4) and Zr(dpm)(4) (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)(2) (tfacen = bis-trifluoroacet ylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesi s, Furthermore, Zr(tfacen)(2) is shown to be an effective metal-organic pre cursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zi rconia thin films.