Confocal microscopy and spectroscopy of InGaN epilayers on sapphire

Citation
Kp. O'Donnell et al., Confocal microscopy and spectroscopy of InGaN epilayers on sapphire, J MICROSC O, 193, 1999, pp. 105-108
Citations number
10
Categorie Soggetti
Multidisciplinary
Journal title
JOURNAL OF MICROSCOPY-OXFORD
ISSN journal
00222720 → ACNP
Volume
193
Year of publication
1999
Part
2
Pages
105 - 108
Database
ISI
SICI code
0022-2720(199902)193:<105:CMASOI>2.0.ZU;2-M
Abstract
We report a preliminary investigation of spatial inhomogeneities in an InGa N epilayer using scanning confocal microscopy as the investigative tool. Th e Daresbury confocal microscope SYCLOPS provides simultaneous high quality reflection and fluorescence images of InGaN sample areas up to 500 mu m squ are, even at room temperature. Sample cooling increases the brightness and quality of the fluorescence image, as expected. Spectral selection using in terference filters permits identification of features close to sample edges resulting from the nitridation of indium droplets. The unexpected non-coin cidence of fluorescence and reflection features below 10 mu m in size is te ntatively attributed to the differing absorption strengths of different cry stallites.