Degradation of MOSFETs on SIMOX by irradiation

Authors
Hakata, T Ohyama, H Simoen, E Claeys, C Miyahara, K Kawamura, K Ogita, Y Takami, Y
Citation
T. Hakata et al., Degradation of MOSFETs on SIMOX by irradiation, J RAD NUCL, 239(2), 1999, pp. 357-360
Citations number
4
Categorie Soggetti
Inorganic & Nuclear Chemistry
Journal title
JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY
ISSN journal
02365731 → ACNP
Volume
239
Issue
2
Year of publication
1999
Pages
357 - 360
Database
ISI
SICI code
0236-5731(199902)239:2<357:DOMOSB>2.0.ZU;2-E
Abstract
Results are presented of a study on the degradation and recovery of the ele ctrical performance of MOSFETs processed on SIMOX substrates, subjected to 1 and 2 MeV electron and to 20 MeV alpha-ray irradiations. The damage coeff icient for alpha-ray irradiation is about three orders of magnitude larger than the one for electron irradiation, which is attributed to the differenc e of incident particle mass and the possibility of nuclear collision during radiation damage.