Effect of irradiation in InGaAs photo devices

Results are presented of an extended study on the degradation of electrical and optical performance and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to a 20 MeV alpha-ray irradiation. The differe nce in radiation damage with 1 MeV fast neutrons and 1 MeV electrons is dis cussed taking into account the energy transfer. The radiation source depend ence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.