Synthesis of lead zirconate titanate stannate antiferroelectric thick films by sol-gel processing

The effects of different sintering procedures on the preparation of antifer roelectric thick films and the structure- property relations in these films were studied. An acetic acid-based sol-gel processing with multistep annea ling and suitable lead oxide overcoat layers was developed to fabricate bot h niobium-doped and lanthanum-doped lead zirconate titanate stannate antife rroelectric thick films. The 5-mu m-thick Pb0.99Nb0.02(Zr0.85Sn0.13Ti0.02)( 0.98)O-3 films demonstrate typical square hysteresis loops with a maximum p olarization of 40 mu C/cm(2), zero remanent polarization, an antiferroelect ric-to-ferroelectric phase transition field of 153 kV/cm, and a ferroelectr ic-to-antiferroelectric phase transition field of 97 kV/cm. The dielectric constant and dielectric loss are 283 and 1.7%, respectively. The 5-mu m-thi ck Pb0.97La0.02(Zr0.65Sn0.31Ti0.04)O-3 films display typical slanted hyster esis loops with very small hysteresis, a maximum polarization of 35.0 mu C/ cm(2), and zero remanent polarization. The dielectric constant and dielectr ic loss are 434 and 2.0%, respectively.