Nitrogen influence on dangling-bond configuration in silicon-rich SiOx : N,H thin films

Authors
Pivac, B Rakvin, B Borghesi, A Sassella, A Bacchetta, M Zanotti, L
Citation
B. Pivac et al., Nitrogen influence on dangling-bond configuration in silicon-rich SiOx : N,H thin films, J VAC SCI B, 17(1), 1999, pp. 44-48
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
1
Year of publication
1999
Pages
44 - 48
Database
ISI
SICI code
1071-1023(199901/02)17:1<44:NIODCI>2.0.ZU;2-L
Abstract
Paramagnetic centers were studied in different SiOx:N,H films deposited by plasma-enhanced chemical vapor deposition in a wide composition range. The total dangling-bond concentration is detected to be proportional to the oxy gen content. Moreover, sample irradiation by ultraviolet light revealed als o that nitrogen impurities play some role. In particular, the presence of N -H bonds induces a release of the him stress, which seems to be related to the concentration of dangling bonds. It is also shown that both weak Si-Si and Si-H bonds may serve as precursors for the dangling-bond formation. (C) 1999 American Vacuum Society. [S0734-211X(99)02301-X].