Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures

We have investigated the dual role of interfacial defects in creating both nonradiative interface recombination and interface charge. Our studies are based on Ga2O3-GaAs interface structures with their unique properties such as low interface state density and radiative GaAs band-to-band recombinatio n. The self-consistent analysis of the steady-state dependence of the spont aneous GaAs emission on excitation density provides all critical characteri stics of interfacial defects simultaneously: the density of interface state s, their capture cross sections, the interface recombination velocities, an d the oxide charge. (C) 1999 American Vacuum Society. [S0734-211X(99)02401- 4].