Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy

Low temperature (LT) GaAs grown on semi-insulating GaAs by molecular beam e pitaxy has been investigated by field effect deep level transient spectrosc opy at several reverse bias fields ranging from -1x10(5) to -4x10(5) V/cm. The activation energy, capture cross section, and electron-phonon coupling parameter all have been found to be modulated by the applied field. The the ories of the Schottky effect and the electron-phonon coupling effect have b een considered to interpret the electron conduction mechanisms in LT GaAs. (C) 1999 American Vacuum Society. [S0734-211X(99)00901-4].