Use of polymethylmethacrylate as an initial pattern transfer layer in fluorine- and chlorine-based reactive-ion etching

The properties of polymethylmethacrylate (PMMA) as a pattern transfer mask in commonly used fluorine- and chlorine-based reactive-ion etching processe s have been studied. A reduction in the PMMA etch rate in CHF3 and SiCl4 ha s been observed for a machine with a lower oxygen background level and an o ptimum selectivity of silicon nitride to PMMA in CHF3 reactive-ion etching (RIE) was obtained also. The machine with the lower base pressure does not exhibit high RIE lag and this allows better transfer of submicron patterns from PMMA to dielectric layers. This improved selectivity has led to a bett er intermediate mask for the fabrication of photonic band gap structures in AlGaAs. (C) 1999 American Vacuum Society. [S0734-211X(99)01301-3].