Optimized cleaning and conditioning of a five station tetrakis diethylamido titanium chemical vapor deposition TiN chamber

A sequence of running a short plasma clean followed by an optimized chamber conditioning and finally chemical vapor deposition (CVD) TiN deposition ha s been developed that minimizes contamination particles, wafer to wafer uni formity, and wet clean downtime on a five station CVD TiN tool. This run se quence simultaneously maintains high yield and throughput, and it has been demonstrated over a 1500 wafer marathon. This sequence of short cleans, con ditioning and depositions offers considerable advantages over the accepted sequence of a long clean, long conditioning, and extended wafer running. Fo llowing a clean, a 70% reduction in deposition rate ramp and thickness non- uniformity has been demonstrated. (C) 1999 American Vacuum Society. [S0734- 211X(99)04001-9].