The microstructure of sigma 1140 (+) SiC fibres

Authors
Cheng, TT Jones, IP Shatwell, RA Doorbar, P
Citation
Tt. Cheng et al., The microstructure of sigma 1140 (+) SiC fibres, MAT SCI E A, 260(1-2), 1999, pp. 139-145
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
260
Issue
1-2
Year of publication
1999
Pages
139 - 145
Database
ISI
SICI code
0921-5093(199902)260:1-2<139:TMOS1(>2.0.ZU;2-Y
Abstract
Transmission electron microscopy (TEM) studies have been carried out on 'as -received' SM1140 (+) SiC fibres grown by CVD onto W wire cores. The transi tion between the W core and the SIC deposit is not abrupt in that there is a reaction zone present at the interface which actually consists of a silic ide layer and a carbide layer. The SiC is subdivided into four concentric l ayers across the fibre diameter, each with a different morphology. The poss ible causes for the differences in the SiC morphology are discussed. (C) 19 99 Elsevier Science S.A. All rights reserved.