Originally developed for application with laser beams, trap detectors are w
idely used as transfer standards in modern monochromator radiometry. Howeve
r, a non-optimized beam focus applied to trap detectors can result in signi
ficant spectral errors. This paper shows that a defocused and improperly al
igned beam entering a Si reflection trap detector can cause an apparent mod
ification of the measured relative spectral responsivity. This is true espe
cially in the ultraviolet (UV) region of the spectrum, where the measured r
elative differences are of the order of several percent due to the signific
ant influence of the direct band-band transitions of Si on the reflectance
of the Si photodiode. The spectral range from 248 nm to 600 nm was investig
ated in detail. Calculated curves, simulated by a computerized geometrical
model, were fitted to the measured data. The geometrical model uses experim
ental spectral reflectance data.