The numerical simulation of organometallic chemical vapor deposition (OMCVD
) of copper films using copper(I) hexafluoroacetylacetonate vinyltrimethyls
ilane and argon was performed. For the solution of the fluid dynamic transp
ort equations, we used the PHOENICS-CVD simulation tool, which includes the
treatment of all relevant transport phenomena. Transport properties of the
organic species were estimated using standard methods. Kinetic data were d
erived from deposition experiments. The model was applied to copper deposit
ion in cold-wall single-wafer R&D equipment. The radial course of depositio
n rates and their dependence on wafer temperature were calculated and compa
red with deposition experiments. The simulation represents the main experim
ental trends and appears to be suitable for process and equipment optimizat
ion. (C) 1999 Elsevier Science B.V. All rights reserved.