Process and equipment simulation of copper chemical vapor deposition usingCu(hfac)vtms

The numerical simulation of organometallic chemical vapor deposition (OMCVD ) of copper films using copper(I) hexafluoroacetylacetonate vinyltrimethyls ilane and argon was performed. For the solution of the fluid dynamic transp ort equations, we used the PHOENICS-CVD simulation tool, which includes the treatment of all relevant transport phenomena. Transport properties of the organic species were estimated using standard methods. Kinetic data were d erived from deposition experiments. The model was applied to copper deposit ion in cold-wall single-wafer R&D equipment. The radial course of depositio n rates and their dependence on wafer temperature were calculated and compa red with deposition experiments. The simulation represents the main experim ental trends and appears to be suitable for process and equipment optimizat ion. (C) 1999 Elsevier Science B.V. All rights reserved.