Pulsed bias pulsed RF characterization measurement system of FET at constant intrinsic voltages

For the first time to our knowledge, a pulsed measurement system has been d eveloped which supports the simultaneous measurement of pulsed I-ds(V-ds, V -gs) and pulsed scattering parameters of FETs at constant intrinsic voltage s. This tool is very useful for the development of nonlinear electrical mod els of microwave active devices, Indeed the nonlinear electrical models pre defined in the commercial software impose on the user the need to determine the behavior of the actine devices at constant intrinsic voltages. (C) 199 9 John Wiley & Sons, Inc.