Structural modifications in silicon irradiated successively by N+ and He+ or Ar8+ and He+ ions

Authors
Reutov, VF Sokhatsky, AS Kutner, VB Lebedev, AN
Citation
Vf. Reutov et al., Structural modifications in silicon irradiated successively by N+ and He+ or Ar8+ and He+ ions, NUCL INST B, 149(3), 1999, pp. 319-324
Citations number
10
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
149
Issue
3
Year of publication
1999
Pages
319 - 324
Database
ISI
SICI code
0168-583X(199902)149:3<319:SMISIS>2.0.ZU;2-2
Abstract
The behaviour of He-ion produced radiation defects in crystalline silicon n ear the interface with an amorphous layer formed by ions of chemically acti ve (N) and inert (Ar) implants was studied. The TEM-investigation of the st ructural modifications in Si along the ion beam direction was carried out b y a novel technique. The boundary of an amorphous layer formed by chemicall y active nitrogen ions was found to work as a useful getter for radiation d efects; a property not found after noble-gas implantation. (C) 1999 Elsevie r Science B.V. All rights reserved.