Influence of initial charge and charge state fluctuations on high-energy ion ranges and track formation

Authors
Komarov, FF Komarov, AF Mironov, AM
Citation
Ff. Komarov et al., Influence of initial charge and charge state fluctuations on high-energy ion ranges and track formation, NUCL INST B, 148(1-4), 1999, pp. 159-163
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
148
Issue
1-4
Year of publication
1999
Pages
159 - 163
Database
ISI
SICI code
0168-583X(199901)148:1-4<159:IOICAC>2.0.ZU;2-T
Abstract
A model used for calculating the depth distribution of implanted atoms and the energy deposited into the electron and nuclear subsystems of solids is studied. The model is based on the transport equations and takes into accou nt the initial charge and the fluctuations of charge states of high-energy ions (E > 1 MeV/amu). The critical dose of 250 MeV Xe+ ions necessary for t he formation of deep amorphous layers in Si, GaAs and InP have been estimat ed. The process of the formation of continuous track regions in InP by 250 MeV Xe+ ions is studied. (C) 1999 Elsevier Science B.V. All rights reserved .