Residual stresses and ion implantation effects in Cr thin films

The evolution of intrinsic residual stresses in sputtered Cr thin films wit h substrate bias and post-deposition ion irradiation is investigated. The r elaxation of tensile stresses and build up of compressive stresses with inc reasing ion irradiation dose is studied using ions of different masses and energies such as 110 keV Ar, 33 keV C and 330 keV Xe. The stress evolution is related to the corresponding microstructural changes in the films. The c hanges in the residual stress during ion irradiation are explained by consi dering the manner in which the interatomic distances and forces change duri ng irradiation, and the generation of defects during irradiation. (C) 1999 Elsevier Science B.V. All rights reserved.