Measurement of lateral stress in argon implanted thin gold films using quartz resonator techniques

Self-consistent measurements of mass change, lateral stress and temperature in thin films during implantation can be made using three quartz resonator s of different crystallographic cuts simultaneously. Thickness measurements of an evaporated Au film were made by Rutherford backscattering (RBS) on a ll three resonators: first, of the original gold electrodes. then following application of approximately 200-nm gold films, and finally after sputteri ng with 50-keV Ar ions. The dose was monitored by collected charge on the s amples and was verified by RES measurement of a Si sample placed in the sam e environment. The sputtering yields on the three resonators can be measure d directly by RES. They were different for the three resonators. Applying t hese sputtering yields to the resonator frequency change information allowe d a calculation of lateral stress accumulation to be made. (C) 1999 Elsevie r Science B.V. All rights reserved.