Pnk. Deenapanray et al., Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma, NUCL INST B, 148(1-4), 1999, pp. 300-305
Deep level transient spectroscopy was used in conjunction with current-volt
age and capacitance-voltage measurements to characterize sputter etching-in
duced defects in n-Si as a function of Ar-plasma pressure. The reverse curr
ent, at a bias of 1 V, of Pd Schottky barrier diodes fabricated on the etch
ed samples increased monotonically with decreasing plasma pressure and thei
r barrier heights followed the opposite trend. Sputter etching created six
prominent electron traps, including the VO and VP centers and V-2(10). The
non-detection of V-2(=/) is attributed to the presence of stress fields in
the etched samples. A secondary defect S1 with an energy level at E-c - 0.2
19 eV is introduced during annealing at the expense of trap P4, which has s
imilar electronic and annealing properties as the complex vacancy cluster E
Ar201 (E-c - 0.201 eV), created in Ar-ion bombarded n-Si. (C) 1999 Elsevier
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