Laser annealing of implanted silicon with temperature-controlled transparency

Laser annealing of the implanted silicon layers at temperatures 4.2-300 K w as performed. It was shown that when the ambient temperature is lowered fro m 300 to 100 K a significant increase in transparency of the silicon substr ate at powerful irradiation (lambda = 1.06 mu m) accompanied by high absorp tion of the amorphous implanted layer occurred. This effect was used for la ser annealing by irradiation directed to the backside of the crystalline su bstrate. Effective recrystallization and electrical activation of the impur ities in the 'tail' of the atom distribution profile took place. (C) 1999 P ublished by Elsevier Science B.V. All rights reserved.