Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy

Standard positron annihilation spectroscopy (PAS) measurements of implanted Si are limited in the detail that is obtainable on the distribution of the implantation induced defects, In particular, accessing the defect tail dis tribution is difficult due to the large numbers of defects in the peak conc entration and the inherent decrease in depth resolution with increasing pos itron energy. Enhanced depth resolution positron annihilation spectroscopy overcomes these problems by combining standard positron measurements with t he controlled removal of thin layers of the implanted sample. The technique is described in derail and examples of its capabilities are shown using bo th simulated and experimental (50 keV 5 x 10(13) cm(-2), self-implanted Si) data. (C) 1999 Elsevier Science B.V. All rights reserved.