Ion-implanted hydrogen in gallium nitride

Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, boun d states, and microstructural effects during annealing up to 980 degrees C were investigated by nuclear-reaction profiling, ion-channeling analysis, t ransmission electron microscopy, and infrared (IR) spectroscopy. At implant ed concentrations greater than or similar to 1 at.%, faceted H-2 bubbles fo rmed enabling identification of preferred surfaces, examination of passivat ing N-H states on these surfaces, and determination of the diffusivity-solu bility product of the H. At concentrations below the threshold of bubble fo rmation. H states characterized by N-H bonding and coherence with the host lattice were observed by IR spectroscopy and ion channeling. (C) 1999 Elsev ier Science B.V. All rights reserved.