Citation
N. Papanicolaou et al., Ion-implantation in SiC and GaN, NUCL INST B, 148(1-4), 1999, pp. 416-420
Citations number
15
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
148
Issue
1-4
Year of publication
1999
Pages
416 - 420
Database
ISI
SICI code
0168-583X(199901)148:1-4<416:IISAG>2.0.ZU;2-B
Abstract
The electrical activation behavior of N- and Al-implantations in bulk V-dop
ed semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. Th
e As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-dif
fusion behavior with room-temperature sheet carrier concentrations of <20%
of the implanted dose. In n-type GaN, compensating levels introduced by the
high-dose implantation damage are thermally stable even at 1150 degrees C
annealing. (C) 1999 Elsevier Science B.V. All rights reserved.