Citation
S. Hutchinson et al., Acceptor profile control in GaAs using co-implantation of Zn and P, NUCL INST B, 148(1-4), 1999, pp. 459-462
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X
→ ACNP
Volume
148
Issue
1-4
Year of publication
1999
Pages
459 - 462
Database
ISI
SICI code
0168-583X(199901)148:1-4<459:APCIGU>2.0.ZU;2-X
Abstract
While co-implantation is well known as a means of dopant control in GaAs, w
e have examined the effect of displacing the two implant profiles with Zn a
s the acceptor and P as the co-implant, We have established that lower resi
stivities, comparable sheet resistances and higher mobilities can be achiev
ed when Zn is implanted into the surface tail of a deep P implant, as compa
red with Zn being implanted to overlap a shallower P implant. (C) 1999 Else
vier Science B.V. All rights reserved.