RES and ERDA study of ion beam synthesised amorphous gallium nitride

Amorphous GaN was synthesised by Ga implantation into N-rich PECVD a-SiNx:H films after annealing between 200 degrees C and 500 degrees C. Similar imp lantation into Si-rich films did not form GaN. X-ray Photoelectron Spectros copy (XPS) demonstrated the presence of GaN bonds in the former, but not th e latter, case. Rutherford backscattering (RBS) and Elastic Recoil Detectio n Analysis (ERDA) demonstrated that implanted Ga substituted for Si in the N-rich films but not in the Si-rich ones. The RBS/ERDA analysis used self-c onsistent fitting of multiple spectra using the combinatorial optimisation Simulated Annealing algorithm, followed by a determination of the confidenc e limits on the depth profiles obtained using Bayesian Inference. (C) 1999 Elsevier Science B.V. All rights reserved.