Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation

Authors
Auret, FD Goodman, SA Legodi, MJ Meyer, WE
Citation
Fd. Auret et al., Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation, NUCL INST B, 148(1-4), 1999, pp. 474-477
Citations number
13
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
148
Issue
1-4
Year of publication
1999
Pages
474 - 477
Database
ISI
SICI code
0168-583X(199901)148:1-4<474:EKOETI>2.0.ZU;2-T
Abstract
We have employed deep level transient spectroscopy (DLTS) to study the elec trical properties of 5.4-MeV I-le-ion irradiation induced electron traps. E R3-ER5. in epitaxially grown GaN. These main defects ER3-ER5, are positione d at E-C - 0.20 eV. E-C - 0.78 eV and E-C - 0.95 eV. respectively. Previous studies showed that electron emission from ER3 exhibited an electric field enhancement not characteristic of a Poole-Frenkel effect. Based on this an d the true capture cross section of ER3. we suggest that ER3 is an acceptor -like defect. (C) 1999 Elsevier Science B.V. All rights reserved.