The influence of implantation and annealing conditions on optical activityof Er3+ ions in 6H SiC

6H SIC implanted with Er+ ions was analysed using Rutherford backscattering and channelling spectroscopy and photoluminescence. Samples were implanted at a temperature of 350 degrees C at three energies (850, 1300, 1900 keV) of Er ions. The doses were either 5x10(13) or 5x10(14)/cm(2) for each ion e nergy. Channelling analysis showed that damage produced by low dose implant ations was almost totally removed already at 1000 degrees C. To activate th e Er ions temperatures above 1250 degrees C were required. The role played by nitrogen donors in the excitation of Er3+ ions is investigated. It is sh own that at low temperatures N-donors participate in energy transfer to Er3 +:, but at T>190 K they do not influence the PL efficiency of the I-4(13/2) -I-4(15/2) emission. A tentative model of the excitation of Er3+ ions is di scussed. (C) 1999 Elsevier Science B.V. All rights reserved.