Deep level properties of erbium implanted epitaxially grown SiGe

We have used deep-level transient spectroscopy (DLTS) in an investigation o f the electronic properties of defects introduced in n-Si-0.96 Ge-0.04 duri ng 180 keV erbium ion implantation (fluence = 1 x 10(10) cm(-2)). Five defe cts with discrete energy levels, ranging from 0.17 to 0.59 eV below the con duction band, were introduced during Er ion implantation. These defects are compared to those introduced during He-ion etching and alpha particle irra diation. By comparing the DLTS spectra and DLTS signatures, it was noted th at certain defects (Eer3, Eer4 and Eer5) are only observed in the Er implan ted SiGe. Photoluminescence in the 1.54 mu m region due to the erbium impla ntation in Si-0.96 Ge-0.04 was observed after a thermal treatment at 900 de grees C for 30 s. (C) 1999 Published by Elsevier Science B.V. All rights re served.