We have used deep-level transient spectroscopy (DLTS) in an investigation o
f the electronic properties of defects introduced in n-Si-0.96 Ge-0.04 duri
ng 180 keV erbium ion implantation (fluence = 1 x 10(10) cm(-2)). Five defe
cts with discrete energy levels, ranging from 0.17 to 0.59 eV below the con
duction band, were introduced during Er ion implantation. These defects are
compared to those introduced during He-ion etching and alpha particle irra
diation. By comparing the DLTS spectra and DLTS signatures, it was noted th
at certain defects (Eer3, Eer4 and Eer5) are only observed in the Er implan
ted SiGe. Photoluminescence in the 1.54 mu m region due to the erbium impla
ntation in Si-0.96 Ge-0.04 was observed after a thermal treatment at 900 de
grees C for 30 s. (C) 1999 Published by Elsevier Science B.V. All rights re
served.