Phase formation in silicon carbide, silicon, and glassy carbon after high-dose titanium implantation using a MEVVA ion source

The phase formation in 3C-SiC, and - for comparison - in silicon and glassy carbon (GC) after high-dose Ti ion implantation is studied using X-ray dif fraction (XRD), X-ray photoelectron spectroscopy (XPS), Rutherford Backscat tering Spectroscopy (RBS) and cross-sectional transmission electron microsc opy (XTEM). For this purpose, Ti implantations were performed at a constant target temperature of 550 degrees C with a MEVVA ion source. Implantation into SiC leads to a substitution of silicon atoms by incorporated Ti atoms. A compositionally graded layer consisting of a ternary TixSi1-xC compound with cubic structure is formed, in which Ti is bonded to C like in TIG. The compound formed is completely aligned with the crystal lattice of 3C-SiC a nd is stable against annealing at temperatures of at least 1000 degrees C a nd times of at least 1 h. (C) 1999 Published by Elsevier Science B.V. All r ights reserved.