Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC

Disorder accumulation in ion implanted 6H-SiC and the associated surface sw elling are simulated with a Monte Carlo binary collision code. The paramete rs of the models used in the program are adjusted through the comparison wi th previously reported data obtained from 0.5 MeV Al+ implantation at room temperature. The evolution of damage profiles, as determined with the Ruthe rford Backscattering-Channeling technique, can be described by the linear c ascade approximation, provided that apparent atomic displacement energies m uch smaller than commonly referred values are used. This observation indica tes that, in spite of the reported high individual displacement threshold e nergies, SIC is very sensitive to collective disordering effects induced by ion irradiation. Swelling can be modeled assuming a linear dependence of s urface shift on the integral of damage in the disordered crystal, plus a co ntribution of the relaxation which occurs at the onset of crystal-to-amorph ous transition. (C) 1999 Elsevier Science B.V. All rights reserved.