Y. Shima et al., Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition, NUCL INST B, 148(1-4), 1999, pp. 599-603
Silicon oxynitride (SiOxNy) films (0.1-0.7 mu m) were produced on Si(100),
glass and 316L stainless steel substrates by ion beam assisted deposition (
IBAD) using Si evaporation and the concurrent bombardment with a mixture of
200 eV N-2 and Ar, or O-2 and Ar ions. Adhesion was evaluated by pull-off
tests. Film hardness was measured by a nanoindentation system with AFM. The
measurement of internal stress in the films was carried out by the Stoney
method. The film structure was examined by GXRD. XPS was employed to measur
e the composition of films and to analyze the chemical bonds. The dependenc
e of mechanical properties on the film thickness and the processing tempera
ture during deposition was studied. Finally, the relations between the mech
anical properties of the films and the correlation with corrosion-protectio
n ability of films are discussed and summarized. (C) 1999 Published by Else
vier Science B.V. All rights reserved.