Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

Citation
Y. Shima et al., Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition, NUCL INST B, 148(1-4), 1999, pp. 599-603
Citations number
17
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
148
Issue
1-4
Year of publication
1999
Pages
599 - 603
Database
ISI
SICI code
0168-583X(199901)148:1-4<599:MPOSOT>2.0.ZU;2-Z
Abstract
Silicon oxynitride (SiOxNy) films (0.1-0.7 mu m) were produced on Si(100), glass and 316L stainless steel substrates by ion beam assisted deposition ( IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N-2 and Ar, or O-2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measur e the composition of films and to analyze the chemical bonds. The dependenc e of mechanical properties on the film thickness and the processing tempera ture during deposition was studied. Finally, the relations between the mech anical properties of the films and the correlation with corrosion-protectio n ability of films are discussed and summarized. (C) 1999 Published by Else vier Science B.V. All rights reserved.