Iv. Afanasyev-charkin et al., Optical absorption and thermoluminescence of MgAl2O4 spinel crystals implanted with Xe++ ions, NUCL INST B, 148(1-4), 1999, pp. 787-792
We have studied changes in optical absorption of MgAl2O4 spinel crystals im
planted with 340 keV Xe++ ions at about 120 K, to fluences ranging from 10(
15)-10(21) ions/m(2). With increasing ion fluence, we observe an increase i
n optical absorption, especially in the vicinity of two absorption bands: o
ne centered at 5.3 eV. the other at 6.9 eV. The absorption band at 5.3 eV,
caused by F-centers, saturates at a fluence between 1.10(18) and 1.10(19) i
ons/m(2). This is the same dose range in which formation of a metastable ph
ase of spinel has been reported previously. The band at 6.9 eV grows with i
ncreasing dose and saturates at 1.10(20) -3.10(20) ions/m(2). Previous stud
ies have shown that spinel is amorphized by Xe ion irradiation in this dose
range. Annealing studies were also conducted on the Xe ion implanted spine
l crystals. By optical absorption, F-centers were found to anneal at 500 de
grees C. Thermoluminescence measurements revealed a temperature dependence
of luminescence that correlates well with the optical absorption. (C) 1999
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