Effects of Ne- and Ar-ion irradiations on Ni/SiO2 bilayers

Modifications of Ni/SiO2 bilayers by irradiations with 100-150 keV Ne- ions or 180 keV Ar-40(+) ions up to fluences of 5 x 10(17)/cm(2) and subsequent thermal annealings in vacuum have been investigated. The concentration pro files of the film components and implanted ions have been measured by means of Rutherford Backscattering Spectrometry and Time-of-Flight Elastic Recoi l Detection Analysis (TOF-ERDA). We report on the results concerning surfac e sputtering and noble-gas collection during implantation at 77 K and migra tion of the implants during thermal annealing. Very little Ne precipitation at the Ni/SiO2 interface has been found over the full fluence range, while Ar precipitates occur at fluences exceeding 10(17) ions/cm(2). During anne alings up to 675 K, the implanted Ne content retained in the Ni film remain s constant. but strongly decreases in the SiO2 film. (C) 1999 Elsevier Scie nce B.V. All rights reserved.