Paramagnetic defects in modified carbon-containing semiconductors

Ion implanted polymers and diamonds and pyrolysed polymers were studied usi ng the standard method of electron spin resonance. For all investigated dia monds and carbon-containing semiconductors the ESR signal with g-value of 2 .0025-2.0027 was found. It was estimated that ion implantation and thermal treatment each brine similar changes to the parameters of this signal. The corresponding paramagnetic centres are caused by the low dimensional carbon -rich clusters or conglomerates composed of the mostly sp(2)-hybridised car bon atoms with delocalised pi-electrons that bring the main contribution in to the conduction processes which are realised in the diamonds and carbon-c ontaining materials modified by implantation or pyrolysis. (C) 1999 Publish ed by Elsevier Science B.V. All rights reserved.