Raman-active phonons in Bi2Sr2-xLaxCaCu2Oy: effect of the oxygen content induced by La doping

Authors
Qian, GG Chen, XH Ruan, KQ Li, SY Cao, Q Wang, CY Cao, LZ Yu, M
Citation
Gg. Qian et al., Raman-active phonons in Bi2Sr2-xLaxCaCu2Oy: effect of the oxygen content induced by La doping, PHYSICA C, 312(3-4), 1999, pp. 299-303
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
312
Issue
3-4
Year of publication
1999
Pages
299 - 303
Database
ISI
SICI code
0921-4534(19990201)312:3-4<299:RPIBEO>2.0.ZU;2-A
Abstract
Polycrystalline samples of Bi2Sr2-xLaxCaCu2Oy and pure Bi2212 with differen t oxygen content have been prepared and studied by Raman spectroscopy. No f requency change of O(Bi)A(g) mode is observed. The O(Sr)A(g) mode exhibits remarkable downward frequency shift. The analysis indicates that the conten t of excess oxygen inserted into the Bi2O2 layer is the important factor ca using frequency shift of the O(Sr)A(g) mode. (C) 1999 Elsevier Science B.V. All rights reserved.