Photoionization of impurities in quantum-well wires

Authors
Sali, A Fliyou, M Satori, H Loumrhari, H
Citation
A. Sali et al., Photoionization of impurities in quantum-well wires, PHYS ST S-B, 211(2), 1999, pp. 661-670
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
211
Issue
2
Year of publication
1999
Pages
661 - 670
Database
ISI
SICI code
0370-1972(199902)211:2<661:POIIQW>2.0.ZU;2-Z
Abstract
The photon energy dependence of the photoionization cross-section is calcul ated for a hydrogenic shallow donor impurity located in quantum-well wires of GaAs, surrounded by Ga1-xAlxAs as a function of the sizes of the wire fo r both infinite- and finite-well models. The results show that the photoion ization cross-section depends on the polarization axis relative to the wire axis as well as on the quantum wire dimensions and the inhomogeneous confi nement potential.