Luminescent properties of semiconductors with amphoteric centers of recombination

Authors
Vakulenko, OV Kravchenko, VM
Citation
Ov. Vakulenko et Vm. Kravchenko, Luminescent properties of semiconductors with amphoteric centers of recombination, PHYS ST S-B, 211(2), 1999, pp. 839-846
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
211
Issue
2
Year of publication
1999
Pages
839 - 846
Database
ISI
SICI code
0370-1972(199902)211:2<839:LPOSWA>2.0.ZU;2-M
Abstract
The concept of amphoteric centers of recombination (ACR) is applied to acco unt for a non-monotonic behavior of the decay kinetics and temperature depe ndence of luminescence in wide-gap semiconductors as well as the flaring up and quenching action of infrared light on luminescence. The physical prope rties of ACR and the mechanisms of their formation in semiconductors are di scussed by the example of isovalently doped ZnSe(Te) crystals. It is shown that the model of a semiconductor with ACR can qualitatively describe the " anomalous" luminescent properties of ZnSe(Te).